TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

Boron diffusion in SiGeC layers is studied under different actual process conditions, with RTA temperatures in the range 1020-1100 °C. Model parameters for the process simulator TSUPREM-4 (Tsuprem-4 computer code from Avant! Corporation) have been derived for equilibrium and transient enhanced diffusion conditions. The model and model parameters have been validated for a 0.13 μm BiCMOS process.