کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9699144 | 1461440 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of strain-relaxed SiGe buffer layers on Si(0Â 0Â 1) substrates with pure-edge misfit dislocations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
We report a method to form strain-relaxed SiGe buffer layers on Si(0Â 0Â 1) substrates with pure-edge dislocations. Since the Burgers vector of the pure-edge dislocation has only one-edge component along one of the in-plane ã110ã directions, it is expected that mosaicity and surface roughening are suppressed in the SiGe buffer layer relaxed with pure-edge dislocations at the SiGe/Si(0Â 0Â 1) interface. In order to form such layers, epitaxial or amorphous Si is deposited on a thin Ge layer which has a network of pure-edge dislocations at the Ge/Si(0Â 0Â 1) substrate interface, followed by high-temperature annealing for forming intermixed SiGe layers. We confirmed that the network structure was preserved after the high-temperature annealing. The obtained SiGe buffer layers exhibit less mosaicity and have flat surfaces with root mean square values less than 1Â nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 131-135
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 131-135
نویسندگان
Noriyuki Taoka, Akira Sakai, Tomohiro Egawa, Osamu Nakatsuka, Shigeaki Zaima, Yukio Yasuda,