کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9699148 1461440 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method
چکیده انگلیسی
The strain relaxation within a strained-Si layer may be one of the key issues in the development of strained-Si MOSFET devices for high-performance ULSIs. In order to investigate the strain relaxation within the thin strained-Si layers, a new characterization technique for directly evaluating the strain variation within the layers is required. Hence, we have developed the nano-beam electron diffraction (NBD) method which has a lateral resolution of less than 10 nm and a strain resolution of 0.1%. In this paper, we discuss detailed investigations to determine whether the NBD method can be utilized to clarify the strain within a strained-Si layer grown on an SiGe structure and a MOSFET device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1–3, February–June 2005, Pages 155-159
نویسندگان
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