کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9699161 | 1461440 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Application of plasma oxidation to strained-Si/SiGe MOSFET
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have applied microwave-plasma oxidation to the gate oxide formation of strained-Si metal-oxide-semiconductor field-effect-transistor (MOSFET). Change in surface morphology of plasma oxidized strained-Si/SiGe is studied using an atomic force microscope (AFM) and compared with thermal oxidation. The AFM observation is carried out before and after oxidation in an identical area of a single sample. Plasma oxidation at 400Â âC which proceeds under diffusion-limited condition suppressed nonuniform oxide growth caused by cross-hatch related surface morphology and is able to form gate oxide on strained-Si/SiGe without increase in surface roughness. Strained-Si n-channel MOSFETs on 15%-Ge content wafer were fabricated and the transconductance was enhanced by 70% compared with unstrained Si devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 225-230
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 225-230
نویسندگان
Mika Nishisaka, Tanemasa Asano,