کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9699164 1461440 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
NiSi integration in a non-selective base SiGeC HBT process
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
NiSi integration in a non-selective base SiGeC HBT process
چکیده انگلیسی
A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 μΩ cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for ft and fMAX, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1–3, February–June 2005, Pages 245-248
نویسندگان
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