SiGeC HBTs : The TCAD Challenge Reduced to Practice

This paper reflects on practical aspects of a TCAD chain for SiGe:C HBTs, that has been successfully used for the development of a 0.18 μm low-power and 0.13 μm high-speed BiCMOS technology. The availability of a predictive TCAD chain from process to circuit simulations is important for the timely delivery of a new technology fulfilling circuit-level requirements. The boron and carbon diffusion in the SiGeC HBT process simulations under equilibrium and transient enhanced diffusion condition, supporting simulation tools for device optimization and the importance of two-dimensional effects will be addressed.