کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9699174 | 1461440 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A simple electrical approach to extracting the difference in bandgap across neutral base for SiGe HBT's
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A simple electrical approach to extracting the difference in bandgap across neutral base for SiGe HBT's A simple electrical approach to extracting the difference in bandgap across neutral base for SiGe HBT's](/preview/png/9699174.png)
چکیده انگلیسی
A simple general-purpose electrical approach to extracting the difference in bandgap across neutral base, i.e. ÎEGÂ grade, for SiGe HBT's as well as Si BJT's with arbitrary Ge and dopant profiles, has been proposed. This approach is based on temperature dependence evaluation of combination of collector current, transconductance, and output conductance. In this work, it has been applied to fabricated RPCVD SiGe HBT's with the extracted values for ÎEGÂ grade of 48 and 69Â meV for two experimental splits, respectively. The bigger value for the latter has been ascribed to better confinement of boron profile within SiGe base layer owing to carbon incorporation which can effectively suppress boron out-diffusion.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 301-306
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 301-306
نویسندگان
J. Fu, K. Bach,