کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9789519 | 1512911 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InGaN/GaN MQD p-n junction photodiodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The p-n junction photodiodes with InGaN/GaN MQD have been prepared by metal-organic chemical vapor deposition (MOCVD) growth; we achieved nanoscale InGaN self-assembled QDs in the well layers of the active region. The RT PL spectrum peak position for the fabricated InGaN/GaN MQD p-n Junction PDs is located at 464.6Â nm and FWHM is 24.2Â nm. After finishing device process, it was fond that the turn on voltage in forward bias and the break down voltage in reverse bias are about 3 and â13.5Â V, respectively. Furthermore, with 1, 2, and 3Â V applied bias, the maximum responsivity of the fabricated MQD p-n junction PD was observed at 350Â nm, and the minimum of spectral response was measured at 465Â nm. It was also found that the responsivity was nearly a constant from 390 to 440Â nm. It seems to suggest that the spectral response in the range of 390-440Â nm is due to the effect of the InGaN dots-in a-well active layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 30, Issues 1â2, December 2005, Pages 13-16
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 30, Issues 1â2, December 2005, Pages 13-16
نویسندگان
Shang-Chao Hung, Yan-Kuin Su, Shoou-Jinn Chang, Liang-Wen Ji, Dashen Shen, C.H. Huang,