کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9789574 | 1512912 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theory for electron hopping through nanometer-scale contacts: From tunneling regime to ballistic regime
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Using the recursion-transfer-matrix (RTM) method combined with nonequilibrium Green's function (NEGF) method, we study the electronic states and current-voltage (I-V) characteristics of junction systems with atomic-scale nanocontacts as a function of the distance between electrodes. We observe a strong nonlinear behavior in the I-V characteristics and correspondingly a gap structure appears in conductance. We find that such a nonlinear behavior emerges when the transport properties change from tunneling to ballistic regimes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 29, Issues 3â4, November 2005, Pages 515-519
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 29, Issues 3â4, November 2005, Pages 515-519
نویسندگان
Kenji Hirose, Nobuhiko Kobayashi,