کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9789598 | 1512912 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Superconductor-insulator transition induced by over-deposited Ge in the insulating ultrathin a-Nb film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Superconductor-insulator transition induced by over-deposited Ge in the insulating ultrathin a-Nb film Superconductor-insulator transition induced by over-deposited Ge in the insulating ultrathin a-Nb film](/preview/png/9789598.png)
چکیده انگلیسی
We have observed the superconductor-insulator (S-I) transition induced by over-deposited Ge in the insulating ultrathin amorphous Nb (a-Nb) film. The experiments are performed by depositing Ge onto the insulating a-Nb film with a thickness of 1.04Â nm. For dGe>0.3nm, where dGe was a thickness for Ge film, the reduction of electrical sheet resistances was seen at low temperature region, suggesting superconductor. The normal sheet resistance at 8Â K decreased monotonically with increasing dGe. The simplest explanation of this S-I transition is that the electron localization effect is weakened due to the addition of Ge film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 29, Issues 3â4, November 2005, Pages 624-627
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 29, Issues 3â4, November 2005, Pages 624-627
نویسندگان
Ryuichi Masutomi, Takashi Ito, Nobuhiko Nishida,