کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9789614 1512912 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Suppression of the unconventional metallic behavior by gate voltage in MWNT device
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Suppression of the unconventional metallic behavior by gate voltage in MWNT device
چکیده انگلیسی
We observed an ambipolar behavior in multiwalled carbon nanotubes (MWNT) in a back-gate configuration, which allowed us to perform systematic inspection of the low-temperature transport properties against gate voltage. Power-law behaviors in temperature and bias-dependent conductance, disappeared when a high gate voltage was applied, and conductance became temperature- and bias independent. This indicates a gate-induced transformation from the unconventional to the normal metallic states in MWNT.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 29, Issues 3–4, November 2005, Pages 698-701
نویسندگان
, , , ,