Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers

We demonstrate that excellent 1.3 μm QD laser performance can be achieved with the use of a high-temperature step during the growth of the GaAs spacer layers. An optimised laser structure exhibits a very low room-temperature Jth and operates CW from the ground-state up to at least 105 °C. Spontaneous emission measurements indicate that the high-temperature performance is limited by non-radiative processes rather than by the thermal excitation of carriers into higher energy QD states.