کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9789818 1512915 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Magnetic field dependence of hole levels in InAs quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Magnetic field dependence of hole levels in InAs quantum dots
چکیده انگلیسی
We have studied the charging of InAs quantum dots with holes in perpendicular fields up to 16 T by capacitance-voltage spectroscopy. The first two charging peaks show almost no shift with magnetic field which is consistent with the filling of a twofold degenerate s-like state with no orbital angular momentum. The next four charging peaks shift towards lower and higher energy in an alternating fashion. Peaks 5 and 6 shift approximately twice as strong as peaks 3 and 4. This behavior cannot be explained by the charging of a fourfold degenerate p-shell according to Hund′s first rule. We speculate that the p-shell is not completely filled before the filling of the d-shell starts.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 26, Issues 1–4, February 2005, Pages 446-449
نویسندگان
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