کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9789818 | 1512915 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Magnetic field dependence of hole levels in InAs quantum dots
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Magnetic field dependence of hole levels in InAs quantum dots Magnetic field dependence of hole levels in InAs quantum dots](/preview/png/9789818.png)
چکیده انگلیسی
We have studied the charging of InAs quantum dots with holes in perpendicular fields up to 16Â T by capacitance-voltage spectroscopy. The first two charging peaks show almost no shift with magnetic field which is consistent with the filling of a twofold degenerate s-like state with no orbital angular momentum. The next four charging peaks shift towards lower and higher energy in an alternating fashion. Peaks 5 and 6 shift approximately twice as strong as peaks 3 and 4. This behavior cannot be explained by the charging of a fourfold degenerate p-shell according to Hundâ²s first rule. We speculate that the p-shell is not completely filled before the filling of the d-shell starts.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 26, Issues 1â4, February 2005, Pages 446-449
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 26, Issues 1â4, February 2005, Pages 446-449
نویسندگان
D. Reuter, P. Kailuweit, A.D. Wieck, U. Zeitler, J.C. Maan,