ZnO MOVPE growth: From local impurity incorporation towards p-type doping

We present the growth of high quality ZnO layers by metal-organic vapor phase epitaxy and the impact of growth defects on impurity incorporation. For undoped as well as for doped layers impurities are preferentially incorporated at growth defects. Group-V doping by arsenic or nitrogen most probably leads to the incorporation of acceptor levels suitable for p-type doping with local but no general p-type conductivity. We find that for co-doping with arsenic and nitrogen, homogeneous p-type conductivity can be achieved, disturbed by a few remaining n-type regions due to small growth defects.