کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9803411 1516466 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High-resolution XRD characterization of SiGeC structures for high frequency microelectronics applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
High-resolution XRD characterization of SiGeC structures for high frequency microelectronics applications
چکیده انگلیسی
It is demonstrated how high resolution X-ray diffractometry (XRD) in comparison to different other characterization techniques, reflectometry, spectroscopic ellipsometry, Auger electron spectroscopy, secondary ion mass spectroscopy, and transmission electron microscopy, can be used to analyze the layer properties of typical SiGeC hetero-bipolar transistor (HBT) structures. For three different HBT's the parameters of Si cap and total SiGeC layer thickness, and the maximum Ge content are measured and the error limits of the different techniques are discussed. The values obtained agree very well within the error limits. Concerning layer thickness an achievable accuracy of about 1 nm is realistic and reproducible in a routine process. The highest accuracy in Ge content determination of about 0.5% can be realized by XRD and well-calibrated spectroscopic ellipsometry. XRD measurements in small (0.5 × 0.5 mm2) structures show comparable results with a laboratory source and synchrotron radiation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 401, Issues 1–2, 29 September 2005, Pages 254-260
نویسندگان
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