کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829346 | 1524489 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Direct growth of high-quality CdTe epilayers on Si(2Â 1Â 1) substrates by metalorganic vapor-phase epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Direct growth of high-quality CdTe epilayers on Si(2Â 1Â 1) substrates by metalorganic vapor-phase epitaxy Direct growth of high-quality CdTe epilayers on Si(2Â 1Â 1) substrates by metalorganic vapor-phase epitaxy](/preview/png/9829346.png)
چکیده انگلیسی
High-quality epitaxial CdTe layers were grown on Si(2 1 1) substrates in a metalorganic vapor-phase epitaxy. In order to obtain homo-orientation growth on Si substrates, pre-treatment of the substrates was carried out in a separate chamber by annealing them together with pieces of GaAs at 800-900 °C in a hydrogen environment. Grown epilayers had very good substrate adhesion. The full-width at half-maximum value of the X-ray double crystal rocking curve from the CdTe(4 2 2) plane decreased rapidly with increasing layer thickness, and remained between 140-200 arcsec for layers thicker than 18 μm. Photoluminescence measurement at 4.2 K showed high-intensity bound excitonic emission and very small defect-related deep emissions indicating the high crystalline quality of the grown layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 284, Issues 1â2, 15 October 2005, Pages 15-19
Journal: Journal of Crystal Growth - Volume 284, Issues 1â2, 15 October 2005, Pages 15-19
نویسندگان
M. Niraula, K. Yasuda, H. Ohnishi, K. Eguchi, H. Takahashi, K. Noda, Y. Agata,