کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829480 | 1524492 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancement of crystalline, piezoelectric and optical quality of LiNbO3 single crystals by post-growth annealing and poling
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
LiNbO3 single crystals grown by Czochralski (CZ) method were characterized in their as-grown (in situ poled), post-growth annealed and post-growth poled states by high-resolution X-ray diffractometry (HRXRD), piezometry, UV-Vis and FTIR spectroscopy methods. From high-resolution diffraction curves (DCs), it was found that the as-grown specimens contain low and very low angle boundaries. Post-growth annealing at elevated temperatures results in removing the grain boundaries but leads to decrease in the piezoelectric constant d33 to 14Â pC/N from its initial value of 17Â pC/N, showing the misorientation of domains though the structural grain boundaries were removed. Such post-growth annealed samples were re-poled with different poling intensities. Poling leads to enhancement in piezoelectric constant d33 upto 23Â pC/N. The decrease in half-width of the DC on poling of annealed specimens also indicates improvement in the crystalline perfection. Homogeneity of Li content was studied by UV-Vis spectra along the crystal boule. Annealing and subsequent poling treatments resulted in decrease of absorption coefficient and shifting of absorption edge. These results indicate the reduction of impurities and antisitic defects. FTIR measurements on post-growth annealed samples show significant reduction in OHâ concentration and almost complete removal of CO32â ionic defects, which were otherwise observed in as-grown state.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 282, Issues 3â4, 1 September 2005, Pages 394-401
Journal: Journal of Crystal Growth - Volume 282, Issues 3â4, 1 September 2005, Pages 394-401
نویسندگان
G. Bhagavannarayana, G.C. Budakoti, K.K. Maurya, B. Kumar,