کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829754 | 1524498 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
LP MOVPE growth and characterization of high Al content AlxGa1âxN epilayers
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: LP MOVPE growth and characterization of high Al content AlxGa1âxN epilayers LP MOVPE growth and characterization of high Al content AlxGa1âxN epilayers](/preview/png/9829754.png)
چکیده انگلیسی
High quality AlxGa1âxN layers have been grown on sapphire (0 0 0 1) by low pressure metalorganic vapour phase epitaxy (LP MOVPE) at 1180 °C. The aluminum content covers a wide composition range varying from 0 to 65%. In order to ameliore the quality of these epilayers especially for high aluminum content (XsAl >0.35), growth conditions are carefully optimized. The growth rate of AlGaN increases linearly with increasing group III elements partial pressure. The reduction of the growth pressure from 50 to 20Ã10â3 atm induces an increase of the growth rate and raises the solid Al content from 19.6 to 53.3%. Additionally, a linear relationship (slope about 1) is observed between gas and solid aluminum content in the whole range of Al content in AlGaN alloys grown at 20Ã10â3 atm. The structural properties of AlxGa1âxN layers, with different aluminum composition, are characterized by double X-ray diffraction (DDX) showing a high quality of our epilayers. A degradation of the crystalline quality of AlxGa1âxN films is observed with increasing aluminum content. The optical properties of these layers are investigated by photoluminescence measurements at low temperature (12 K). With increasing the Al content, the principal peak (neutral donor bound exciton) shifts to higher energies and the full width at half maximum (FWHM) increases significantly.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 279, Issues 1â2, 15 May 2005, Pages 31-36
Journal: Journal of Crystal Growth - Volume 279, Issues 1â2, 15 May 2005, Pages 31-36
نویسندگان
C. Touzi, F. Omnès, B. El Jani, P. Gibart,