Growth of BxAl1−xN layers using decaborane on SiC substrates

BxAl1−xN epitaxial growth on the SiC substrates by plasma-assisted molecular beam epitaxy was investigated. B atoms were supplied by pyrolysis of decaborane (B10H14). The maximum B composition of single-phase BxAl1−xN layers was 1.8%. The surface roughness of BxAl1−xN layers was increased with increasing B composition. Two-dimensionally grown BxAl1−xN layer was obtained up to x=0.7%.