کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829887 | 1524500 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of vanadium-doped GaN by MOVPE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper reports on the vanadium doping of GaN layers grown by metal-organic vapour phase epitaxy (MOVPE). We have used vanadium tetrachloride (VCl4) to intentionally incorporate vanadium (V) during crystal growth of GaN. The films were grown on sapphire substrates by in-situ SiN treatment. We describe the in-situ monitoring of the growth process by laser reflectometry. The V incorporation in GaN was investigated by secondary ion mass spectroscopy (SIMS). The V diffusion coefficient in GaN has been calculated to be 10â14 cm2 sâ1 at 1120 °C by fitting the V SIMS profile. The high-resolution X-ray diffraction and atomic force microscopy analysis were employed to study the structural and surface morphology of the films. At room temperature, by comparison with un-doped layers grown in the same conditions, photoluminescence spectra of V-doped GaN layers exhibited a strong blue emission band. The intensity of this blue band increases with the increase of VCl4 flow rate. We propose that is associated with intrinsic defects introduced by the growth conditions or V-related intrinsic defects complexes. Upon V-doping, the yellow luminescence band shows a drastic reduction in integrated intensity, which could be due to a decrease in the concentration of gallium vacancy (âGa) or âGa-related defect complexes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 277, Issues 1â4, 15 April 2005, Pages 57-63
Journal: Journal of Crystal Growth - Volume 277, Issues 1â4, 15 April 2005, Pages 57-63
نویسندگان
M. Souissi, A. Bchetnia, B. El Jani,