کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829982 | 1524501 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of back-illuminated visible-blind UV photodetector based on AlxGa1âxN p-i-n photodiodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, we reported the growth, fabrication and characterization of an AlxGa1âxN heteroepitaxial back-illuminated visible-blind UV photodetector designed for flip-chip mounting. This device was grown on one side of a polished sapphire substrate using a low-temperature AlN buffer layer created by six-pocket multi-wafer system metalorganic chemical vapor deposition (MOCVD) with a vertical reactor. In order to obtain the wavelength of the visible-blind region, the AlxGa1âxN layer was grown under various conditions of growth time and gas flow rate, after optimizing the AlN buffer layer. This device consisted of a 1.3 μm thick Al0.15Ga0.85N “window layer”, a 0.16 μm thick Al0.08Ga0.92N i-layer, a 0.46 μm thick Al0.08Ga0.92N p-layer, a 0.1 μm thick GaN p-layer, followed by a 30 nm GaN:Mg p+-contact layer. All of the device processing was completed using standard semiconductor processing techniques that included photolithography, metallization and etching. In this device, the zero-bias peak responsivity was found around 0.052 A/W at 340 nm, corresponding to an external quantum efficiency of 19%. The rise and fall time of the photoresponse was 20.8 ns. Moreover, this device exhibits a low dark current density of 17 pA/cm2 at zero-bias.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 276, Issues 3â4, 1 April 2005, Pages 367-373
Journal: Journal of Crystal Growth - Volume 276, Issues 3â4, 1 April 2005, Pages 367-373
نویسندگان
Kyong-Seok Chae, Dong-Wook Kim, Bong-Soo Kim, Sung-Jin Som, In-Hwan Lee, Cheul-Ro Lee,