کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830034 | 1524502 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Depth-dependent optical properties of a HVPE-grown freestanding Si-doped GaN single crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Results of the cathodoluminescence (CL) and micro-Raman measurements in a freestanding 300 μm-thick Si-doped GaN single crystal grown by hydride vapor phase epitaxy (HVPE) are presented. The depth-dependent CL results along the c-axis on the cross-section show that the integrated CL intensities of the near-band-gap emission gradually increase with the CL linewidths broadened from the N face to the Ga face. The physical origin of increase in the CL intensity has been studied by the micro-Raman measurements along the c-axis, which revealed the carrier concentration gradually increases from 2.3Ã1017 (the N face) to 9.3Ã1017 cmâ3 (the Ga face). Our experimental evidence indicates that the broadening of the CL linewidth is due to the increased fluctuation of the local bandgap caused by the heavier concentration of the donor impurities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 276, Issues 1â2, 15 March 2005, Pages 37-42
Journal: Journal of Crystal Growth - Volume 276, Issues 1â2, 15 March 2005, Pages 37-42
نویسندگان
Eui Kwan Koh, Il-Woo Park, H. Choi, M. Yoon, Sung Ho Choh, Hang Sung Kim, Yong Min Cho, Sangsig Kim, Sung Soo Park,