کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830100 | 1524503 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystallinity-damage recovery and optical property of As-implanted Zno crystals by post-implantation annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Since As doping in ZnO using ion implantation must always follow a damage caused by the energetic As ion penetration, there is a growing demand for crystallinity recovery from the surface damage through the post-implantation annealing. The results obtained from our experiments using double crystal X-ray diffraction and the atomic force microscopy indicate that the crystallinity recovery of the As-implanted sample presents the optimum condition when it is annealed at 800 °C for 1 h. From the Raman and photoluminescence measurements through the post-implantation annealing, the As-related optical properties were observed in As-implanted ZnO crystals. Thereby, we confirmed that the surface of the unimplanted ZnO was clearly converted into As-doped p-type ZnO layer by As ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 275, Issues 3â4, 1 March 2005, Pages 541-547
Journal: Journal of Crystal Growth - Volume 275, Issues 3â4, 1 March 2005, Pages 541-547
نویسندگان
T.S. Jeong, M.S. Han, J.H. Kim, C.J. Youn, Y.R. Ryu, H.W. White,