Modeling of a space experiment on Bridgman solidification of concentrated semiconductor alloy

The numerical modeling shows that the sharp increase of g-jitters accelerations 90 min after the start of the growth process, produces an increase of the convective intensity, which mixes the melt and increases the solidification temperature so that the interface jumps forward. The associated morphological destabilization of the interface is experimentally observed on the etched sample and on the longitudinal profile of solute concentration measured in the crystal. After a chemical homogenization of the melt, the controlled growth is started again with an axial concentration profile, corresponding to a Scheil's law.