کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830177 | 1524504 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Drift-induced step instabilities due to the gap in the diffusion coefficient
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
On a Si(1Â 1Â 1) vicinal face near the structural transition temperature, the 1Ã1 structure and the 7Ã7 structure coexist in a terrace: the 1Ã1 structure is in the lower side of the step edge and the 7Ã7 structure in the upper side. The diffusion coefficient of adatoms is different in the two structures. Taking account of the gap in the diffusion coefficient at the step, we study the possibility of step wandering induced by drift of adatoms. A linear stability analysis shows that the step wandering always occurs with step-down drift if the diffusion coefficient has a gap at the step. Formation of straight grooves by the step wandering is expected from a nonlinear analysis. The stability analysis also shows that step bunching occurs irrespective of the drift direction if the diffusion in the lower side of the step is faster. The step bunching disturbs the formation of grooves. If step-step repulsion is strong, however, the step bunching is suppressed and the straight grooves appear. Monte Carlo simulation confirms these predictions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 275, Issues 1â2, 15 February 2005, Pages e129-e134
Journal: Journal of Crystal Growth - Volume 275, Issues 1â2, 15 February 2005, Pages e129-e134
نویسندگان
Masahide Sato, Makio Uwaha, Yukio Saito,