Modeling of epitaxial silicon carbide deposition

The availability of reliable chemical kinetics data is still a key factor in designing epitaxial deposition reactors able to obtain electronic grade surface quality for SiC films. Here, a literature mechanism was considered for the gas phase while a new multi species surface one was introduced. That detailed mechanism was embedded in a series of reactor models of different complexity (1D-3D) to realize a multi hierarchy modeling approach. In the framework of horizontal hot wall reactor with multiwafer rotating susceptor, several process parameters were examined.