کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830277 | 1524506 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 μm
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have demonstrated 1.5 μm light emission from InAs quantum dots (QDs) capped with a thin GaAs layer. The extension of the emission wavelength can be assigned to the large QD height. We also investigate the effect of growth interruption on the PL properties and the shape of InAs QDs fabricated by migration-enhanced growth (MEG). Contrary to expectation, we observed a remarkable blueshift of the emission energy with the growth interruption in MEG mode. Detailed investigations reveal that the blueshift is related to the reduced island height with the growth interruption, which is confirmed by reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) measurement results. Accordingly, the structure changes of the islands are interpreted in terms of thermodynamic and kinetic theories.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 274, Issues 1â2, 15 January 2005, Pages 78-84
Journal: Journal of Crystal Growth - Volume 274, Issues 1â2, 15 January 2005, Pages 78-84
نویسندگان
Z. Gong, Z.D. Fang, Z.H. Miao, Z.C. Niu, S.L. Feng,