کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830316 | 1524507 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MOVPE growth optimization for optically efficient GaInNAs quantum well structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A detailed study to achieve optically efficient GaInNAs QWs by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) is reported. It was found that the insertion of GaNAs/InGaAs layers to GaInNAs QW/GaAs barrier is very effective to control the emission wavelength and improve the optical property of QW. Indium rich (as high as 40%) GaInNAs QWs grown at higher V/III ratio are more desirable to extend emission wavelength over 1.3 μm due to reduced incorporation of impurities. The optical efficiencies of the QW structure were confirmed by the lasing performance in edge-emitting laser. The threshold current density and slope efficiency per facet of a 1360 nm laser diode are measured to be 892 A/cm2 and 0.135 W/A, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 273, Issues 3â4, 3 January 2005, Pages 368-374
Journal: Journal of Crystal Growth - Volume 273, Issues 3â4, 3 January 2005, Pages 368-374
نویسندگان
Ki-Sung Kim, Sung-Jin Lim, Ki-Hong Kim, Jae-Ryung Yoo, Taek Kim, Yong-Jo Park,