کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9837543 | 1525279 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The impacts of grain boundary (GB) character and impurity contamination level on the hydrogen passivation of GBs in multicrystalline silicon (mc-Si) were studied by means of an electron-beam-induced current (EBIC) technique. In mc-Si with a low contamination of Fe, the 300 K EBIC contrast of all kinds of GBs in the H-passivated state was weak and similar to that in the as-grown state. The 100 K EBIC contrast of Σ (Σ=3, 9, and 27) GBs decreased about 75-80%, whereas that of random and small-angle GBs decreased about 35-40%. Due to the different impurity gettering ability of different GBs, the variation in 100 K EBIC contrast has suggested that the effect of H-passivation depends on both the GB character and impurity contamination level. In the mc-Si with heavy contamination of Fe, at both 300 and 100 K, the EBIC contrast of both Σ (Σ=3) and random GBs decreased but the ratio was <40%, suggesting that the H-passivation is mainly affected by the impurity contamination level.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 364, Issues 1â4, 15 July 2005, Pages 162-169
Journal: Physica B: Condensed Matter - Volume 364, Issues 1â4, 15 July 2005, Pages 162-169
نویسندگان
Jun Chen, Deren Yang, Zhenqiang Xi, Takashi Sekiguchi,