کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9837821 | 1525284 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performances of a-Si:H films using hot wire assisted microwave ECR CVD technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
We report on the growth and properties of a-Si:H films using a combination of the hot wire and microwave ECR CVD growth techniques. The films were prepared using W filaments. Films were grown at powers from 175 to 500 W, and the corresponding optical and electronic properties of the films were measured. The temperature of the substrate was varied between â¼200 and 230 °C. It was discovered in the current research that the hot wire could significantly increase the growth rate, about 30 Ã
/s. The H bonding and electronic properties were found to be dependent critically upon the growth rate and the substrate temperature. In such a system, the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of a-Si:H films. The experimental results indicate that the decrease in hydrogen content in the microstructure of a-Si:H films was the primary reason for the improvement of the stability and the optoelectronic properties of a-Si:H films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 357, Issues 3â4, 15 March 2005, Pages 408-411
Journal: Physica B: Condensed Matter - Volume 357, Issues 3â4, 15 March 2005, Pages 408-411
نویسندگان
Ying Li, Guanghua Chen, Shengyi Yin, Qing Wang, Xuemei Song,