کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9841932 | 1525808 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Morphology, structure, and electrical properties of YBa2Cu3Ox thin films on tilted NdGaO3 substrates, deposited by DC-sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Morphology, structure, and electrical properties of YBa2Cu3Ox thin films on tilted NdGaO3 substrates, deposited by DC-sputtering Morphology, structure, and electrical properties of YBa2Cu3Ox thin films on tilted NdGaO3 substrates, deposited by DC-sputtering](/preview/png/9841932.png)
چکیده انگلیسی
Thin YBa2Cu3Ox (YBCO) films were deposited using DC-sputtering technique on NdGaO3 substrates, tilted from (1 1 0) orientation by 0-26°. The structure and surface quality of the substrates were carefully characterized to obtain reliable results of thin films deposition. Structural, morphological and electrical properties of the YBCO thin films show three different ranges of inclination angle: vicinal, intermediate and high. In the vicinal range the properties of the film are generally the same as of the standard films deposited on (1 1 0) NdGaO3 substrate. An increase of the inclination angle to the intermediate range results in a significant improvement of morphology and structural quality of the film. Best electrical parameters are measured for the films of the intermediate range also. Probable reason for such behavior is simultaneous and regular seeding of the film in the joints of facets on the substrate surface. Further increase of inclination angle leads to step bunching and oxygen out-diffusion, destroying both structural and electrical perfection of the tilted-axes YBCO film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica C: Superconductivity - Volume 419, Issues 1â2, 15 February 2005, Pages 53-60
Journal: Physica C: Superconductivity - Volume 419, Issues 1â2, 15 February 2005, Pages 53-60
نویسندگان
Peter B. Mozhaev, Iosif M. Kotelyanskii, Valery A. Luzanov, Julia E. Mozhaeva, Todor Donchev, Emil Mateev, Timur Nurgaliev, Igor K. Bdikin, Bakhyt Zh. Narymbetov,