Formation mechanism of rotational twins in beam-induced lateral epitaxy on (1 1 1)B GaAs substrate
Keywords: 61.72 میلی متر; 68.55.Ac; 61.72.Cc; 61.72.Mm; 68.37.Hk; 68.37.PsA1. Growth mode; A1. Nucleation; A3. BILE; A3. MBE; B1. GaAs