کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1547972 | 1512910 | 2006 | 4 صفحه PDF | دانلود رایگان |
GaN films were grown by radiofrequency plasma-assisted molecular beam epitaxy on a variety of sapphire (0001) substrates with different buffer layer and/or preparation processes, to show the controllability of lattice-polarity selection as well as their applicability to the nanostructure fabrication. Film polarities, which have been checked by reflection high-energy electron diffraction reconstructions and etched morphologies in KOH aqueous solution, were very sensitive to these preparation processes. Ga-polarity GaN could be obtained by an introduction of a high-temperature nitridation and an AlN interlayer deposition, and the N-polarity film with a flat surface and large grains could be grown on a low-temperature-nitrided sapphire in combination with a use of nitrogen-flux modulation sequence, while other pretreatment resulted in the mixed polarities. The resultant morphology of N-polarity GaN after KOH etching clearly reflects crystallographic orientation and the highly anisotropic-etching behavior show the usefulness of the low-temperature-nitrided sapphire for obtaining large-domain N-polarity GaN and the feasibility of nanostructure fabrication without the use of an expensive dry-etching process.
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 32, Issues 1–2, May 2006, Pages 245–248