Optical properties of bulk GaN crystals grown from solution at moderate pressure and temperature
Keywords: A2 رشد کریستال تک; 78.40.FY; 71.70.Ch; 78.55.−m; 71.35.−y; 81.05.Ea; 78.30.FsA1. Characterization; A1. Impurities; A1. Point defects; A2. Growth from high temperature solutions; A2. Single crystal growth; B1. Nitrides