
Comparison of strained SiGe heterostructure-on-insulator (0Â 0Â 1) and (1Â 1Â 0) PMOSFETs: C-V characteristics, mobility, and ON current
Keywords: محکومیت کوانتومی; Heterostructure-on-insulator; PMOSFETs; Crystallographic orientation; Strain; Quantum confinement; SiGe alloy;