کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5403044 | 1392750 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Morphology and optical properties of p-type porous GaAs(1Â 0Â 0) layers made by electrochemical etching
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Morphology and optical properties of p-type porous GaAs(1Â 0Â 0) layers made by electrochemical etching Morphology and optical properties of p-type porous GaAs(1Â 0Â 0) layers made by electrochemical etching](/preview/png/5403044.png)
چکیده انگلیسی
Compared to untreated GaAs surface, room temperature photoluminescence (PL) investigations of the porous layers reveal the presence of two PL bands: a PL peak at â¼871Â nm and a “visible” PL peak at â¼650-680Â nm. Both peak wavelengths and intensities varied from sample to sample depending on the treatment that the samples have undergone. The short PL wavelength at 650-680Â nm of the porous layers is attributed to quantum confinement effects in GaAs nano-crystallites. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-sized crystallites were observed on the porous GaAs surface. An estimation of the mean size of the GaAs nano-crystals obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 128, Issue 10, October 2008, Pages 1611-1616
Journal: Journal of Luminescence - Volume 128, Issue 10, October 2008, Pages 1611-1616
نویسندگان
S. Ben Khalifa, B. Gruzza, C. Robert-Goumet, G. Bremond, M. Hjiri, F. Saidi, L. Bideux, L. Bèji, H. Maaref,