Defect assessment and leakage control in Ge junctions
Keywords: رشد اپتیکال انتخابی; Extended defects; Germanium; Junction leakage; Selective epitaxial growth
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Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays
Keywords: رشد اپتیکال انتخابی; Ge; Selective epitaxial growth; Compressive strain; 40Â nm trench array; Strain analysis;
Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport
Keywords: رشد اپتیکال انتخابی; Selective epitaxial growth; Silicon carbide; Doping; Semiconductors
Selective epitaxial growth of Si1−xGex films via the alternating gas supply of Si2H6, GeH4, and Cl2: Effects of Cl2 exposure
Keywords: رشد اپتیکال انتخابی; Si1−xGex film; Selective epitaxial growth; Cl2 exposure
Low temperature catalyst enhanced etch process with high etch rate selectivity for amorphous silicon based alloys over single-crystalline silicon based alloys
Keywords: رشد اپتیکال انتخابی; Chemical vapor etching; Selective etch; Catalyst-enhanced etch; Selective epitaxial growth; Cyclic deposition etch process; Amorphous silicon; Etch rate selectivity; SiCP; NMOS
Low temperature selective epitaxial growth of SiCP on Si(110) oriented surfaces
Keywords: رشد اپتیکال انتخابی; Si(110); Recessed source/drain; Trigate/FINFET; Sidewall chlorine etching; Selective epitaxial growth; Cyclic deposition etch; SiCP
Low temperature Si:C co-flow and hybrid process using Si3H8/Cl2
Keywords: رشد اپتیکال انتخابی; Exothermic/hypergolic reaction; Hydrides; Chloride etch; Selectivity; Inhibitor; Selective epitaxial growth; Low temperature epitaxy; Advanced CMOS; SiCP
Facile fabrication of ordered Si1−xGex nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates
Keywords: رشد اپتیکال انتخابی; Ordered SiGe nanostructures; Selective epitaxial growth; Anodic aluminum oxide; Diblock copolymer
Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs
Keywords: رشد اپتیکال انتخابی; SiGe; Ge; Stressor; Tensile strain; Anisotropic etching; Wet etching; Selective epitaxial growth; SEG
Study of CVD nanowire high-k metal interface quality for interconnect level MOS devices
Keywords: رشد اپتیکال انتخابی; CVD nanowire; Selective Epitaxial Growth; Nanocapacitor; VLS growth; Low temperature gate stack
Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
Keywords: رشد اپتیکال انتخابی; 45° rotated channel; Gate-dielectric; Low frequency noise; Selective Epitaxial Growth; SOI MuGFET
Nanoscale interfacial engineering to grow Ge on Si as virtual substrates and subsequent integration of GaAs
Keywords: رشد اپتیکال انتخابی; Silicon; Germanium; Silicon dioxide; Gallium arsenide; Selective epitaxial growth; Nucleation; Chemical polishing; Molecular beam epitaxy; Metal-organic chemical vapor deposition
A selective epitaxy collector module for high-speed Si/SiGe:C HBTs
Keywords: رشد اپتیکال انتخابی; Heterojunction Bipolar Transistor (HBT); Silicon-germanium; Cut-off frequency; Selective epitaxial growth; Implantation; Collector;
Energetics of Ge nucleation on SiO2 and implications for selective epitaxial growth
Keywords: رشد اپتیکال انتخابی; Silicon; Germanium; Silicon dioxide; Selective epitaxial growth; Nucleation; Surface kinetics; Rate equation;
Leakage current study of Si1âxCx embedded source/drain junctions
Keywords: رشد اپتیکال انتخابی; 72.20.Jv; 81.15.Gh; Junction leakage; Embedded source/drain regions; Selective epitaxial growth; Strain engineering;
Low temperature selective epitaxial growth of SiGe layers using various dielectric mask patterns and process conditions
Keywords: رشد اپتیکال انتخابی; Selective epitaxial growth; SiGe; RPCVD;
Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition
Keywords: رشد اپتیکال انتخابی; As; Si; Atmospheric pressure; Chemical vapor deposition; In situ doping; Selective epitaxial growth; Raised extension; Segregation; Etching;
Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(0Â 0Â 1) windows
Keywords: رشد اپتیکال انتخابی; 81.15.Gh; 68.47.Fg; 68.35.Fx; Selective epitaxial growth; Relaxed germanium; UHV-CVD;
Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
Keywords: رشد اپتیکال انتخابی; 85.30.Tv; 81.15.Gh; 73.61.Cw; Strained Si; SiGe; CVD; Selective epitaxial growth; nMOSFET;