کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9699180 | 1461440 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques Fabrication of strained Si nMOSFET transistors on thin buffer layers with selective and non-selective epitaxial growth techniques](/preview/png/9699180.png)
چکیده انگلیسی
Strained Si nMOSFET transistors were fabricated on thin SiGe/strained silicon buffer layers, using a standard chemical vapour deposition (CVD) technique. The layers have been grown in a non-selective way (on unpatterned wafers), others with a selective epitaxial deposition (on patterned wafers, after the isolation module). The transistors in both types of layers show a significant transconductance and mobility improvement compared to the reference devices. The process adjustments needed in the isolation module for non-selective SiGe/strained Si transistors are described, and the electrical evaluation of the isolation module for non-selective wafers shows the influence of several processing steps on device performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 337-342
Journal: Materials Science in Semiconductor Processing - Volume 8, Issues 1â3, FebruaryâJune 2005, Pages 337-342
نویسندگان
Geert Eneman, Peter Verheyen, Rita Rooyackers, Romain Delhougne, Roger Loo, Matty Caymax, Philippe Meunier-Beillard, Kristin De Meyer, Wilfried Vandervorst,