کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
728961 | 1461438 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(0Â 0Â 1) windows
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(0Â 0Â 1) windows Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(0Â 0Â 1) windows](/preview/png/728961.png)
چکیده انگلیسی
Relaxed germanium was deposited following a low temperature-high temperature procedure by ultrahigh vacuum chemical vapor deposition in Si trenches opened through a SiO2 mask. The resulting growth is selective, the germanium fills the Si trenches and evolves towards a roof-shaped morphology limited by (0Â 0Â 1), {1Â 1Â 3} and {1Â 1Â 1} facets. The evolution in height of the Ge structure depends on the trench width, and can be understood by considering a growth rate in the ã1Â 1Â 3ã direction equal to 22% of that measured along the ã0Â 0Â 1ã axis. At last, a surprisingly strong Ge diffusion under the SiO2 mask was revealed by selective chemical etching. Such a phenomenon was unexpected because no diffusion through the Si/Ge interface was previously observed on plain wafer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 4â5, AugustâOctober 2006, Pages 460-464
Journal: Materials Science in Semiconductor Processing - Volume 9, Issues 4â5, AugustâOctober 2006, Pages 460-464
نویسندگان
M. Halbwax, Lam H. Nguyen, Frédéric Fossard, X. Le Roux, V. Mathet, V. Yam, Dao Tran Cao, D. Bouchier,