
Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy
Keywords: نیترید سیلیکون; 41.75.âi; 72.80.Ey; 81.15.Hi; Gallium nitride; Silicon nitride; Gallium; Ion implantation; Crystal growth; Electron cyclotron resonance; Molecular beam epitaxy;