Electric structure and optical properties of ReS2 nanomaterials

Based on the first-principles, we survey the structure, electronic and optical properties of ReS2/bi-layer, The result indicate that ReS2 is a direct band-gap semiconductor. And we calculate the optical properties of the ReS2 and bi-layer. Remarkably, the band gap opened in the ReS2 and bi-layer can be effectively regulated through external E-field and biaxial strain. These results provide a way to design photoelectric device and high-performance FETs at room temperature.