The material properties of novel boron doped InZnO thin films by solution process and its application in thin film transistors with enhanced thermal stability

Boron doped InZnO (BIZO) thin film has been fabricated via solution process and the effect of boron addition on the properties of BIZO thin film is investigated with the glancing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), the atomic force microscopy (AFM) and UV-vis spectrophotometer. The XPS spectra show that the oxygen vacancies in IZO semiconductor materials are effectively suppressed by boron contents due to high Lewis acid strength and strong bonding dissociation energy of BO. Moreover, the associated application in TFTs has also been fabricated by solution process and the thermal stability and electrical properties of solution processed BIZO-TFTs are investigated to confirm the decrease of oxygen vacancies in IZO materials. Meanwhile, the capacitance voltage measurement and the density of states are carried out to further investigate the enhanced electrical performance and thermal stability of TFTs due to the suppression of oxygen vacancies. Thus, the B doping is an effective method to suppress the generation of oxygen vacancies in IZO materials and to improve the thermal stability of solution processed BIZO-TFTs.