کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10155729 | 1666359 | 2018 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
I-V and impedance characterization of a solution processed perovskite based heterojunction photodetector
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: I-V and impedance characterization of a solution processed perovskite based heterojunction photodetector I-V and impedance characterization of a solution processed perovskite based heterojunction photodetector](/preview/png/10155729.png)
چکیده انگلیسی
Herein, we report the investigation of electrical and photo response properties of hybrid organic-inorganic perovskite based photodetector. Surface morphology of perovskite thin film examined through Field emission scanning electron Microscope (FESEM) revealed smooth surface with complete coverage of the glass substrate. Different elements present in perovskite thin films, as well as their quantitative ratio are identified by Energy-dispersive X-ray spectroscopy (EDX) analysis. The current-voltage (I-V) measurements are carried out in dark and under illumination conditions to investigate the charge transport process and photodetector performance. The important diode electrical parameters (ideality factor, saturation current, and barrier height) are extracted by the analysis of I-V characteristics using Shockley model. The observed rectification and photo response behavior is analyzed using energy level diagram. The photodetector demonstrates good photoresponse and exhibits responsivity and detectivity value of 0.4 A/W and detectivity of 3â¯Ãâ¯1011 Jones, respectively at -5â¯V. The charge transport mechanisms are examined under the framework of space charge limited conduction (SCLC) model, which helps to extract the mobility, trap density and trap energy. Moreover, electrochemical impedance spectroscopy (EIS) analysis is performed at different applied voltage and employed to determine the different device parameters such as recombination and charge transport resistance, chemical capacitance, mobility and life time. The mobility estimated from impedance analysis show good agreement with the mobility calculated from SCLC model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 410-418
Journal: Superlattices and Microstructures - Volume 122, October 2018, Pages 410-418
نویسندگان
Aditi Upadhyaya, Chandra Mohan Singh Negi, Anjali Yadav, Saral K. Gupta, Ajay Singh Verma,