کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10406975 | 892819 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Activation and deactivation of phosphorus in silicon-on-insulator substrates
ترجمه فارسی عنوان
فعال سازی و غیرفعال کردن فسفر در بستر سیلیکون بر روی مقره
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کلمات کلیدی
فسفر، فعال سازی غیرفعال کردن، سیلیکون روی مقره، لیزر اگزایمر آنیلینگ،
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
چکیده انگلیسی
Phosphorus that had been implanted into silicon-on-insulator (SOI) substrates was activated using different annealing techniques to investigate phosphorus deactivation at low temperatures. A combination of amorphization and excimer laser annealing (ELA) greatly enhanced phosphorus activation. However, heavy doping with phosphorus reduced the thickness of the amorphous layer. Furnace annealing at 350 °C following ELA induced significant deactivation and the deactivation behavior was similar to that following rapid thermal annealing (RTA). The temperature-dependence of phosphorus deactivation in samples that were implanted with a dose of 5Ã1016 cmâ2 showed a transition at 400 °C. The deactivation behavior was more sensitive to temperature below 400 °C than above it. Samples with an implantation dose of 5Ã1015 cmâ2 exhibited only a weak temperature-dependence of deactivation at temperatures above 400 °C, implying that the transition of temperature-dependence is caused by the change of the deactivation mechanism with the phosphorus activation level.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 42, Part 2, February 2016, Pages 219-222
Journal: Materials Science in Semiconductor Processing - Volume 42, Part 2, February 2016, Pages 219-222
نویسندگان
Ruey-Dar Chang, Chih-Hung Lin,