کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10407132 | 892872 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of deposition temperature on the structure and thermal stability of a-C:F films with low dielectric constant
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Fluorinated amorphous carbon films (a-C:F) with low dielectric constant were prepared at different temperatures by electron cyclotron resonance chemical vapor deposition (ECR-CVD) using CHF3 and C2H2 as precursors. The changes of structures, chemical compositions, and dielectric properties with deposition temperature were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and capacitance-voltage characteristics. We found that a-C:F films prepared at high deposition temperature of 300 °C remained amorphous, but the dielectric constant increased from 2.2 for the films deposited at room temperature to 2.75 while F/C composition ratio in the films decreased from 2.3 to 1.5. In order to study the thermal stability the samples were annealed up to 500 °C in vacuum ambience. The films deposited at high substrate temperature have lower F/C, less CF3, CF2 bonding and more cross-linking structures, and thereby lead to better thermal stability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 8, Issue 4, August 2005, Pages 467-471
Journal: Materials Science in Semiconductor Processing - Volume 8, Issue 4, August 2005, Pages 467-471
نویسندگان
Zhaoyuan Ning, Shanhua Cheng, Lingling Chen,