کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10620159 988593 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Evidence for quantum confinement effects in CdSe/ZnSe multilayer thin films prepared by the physical vapor deposition method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Evidence for quantum confinement effects in CdSe/ZnSe multilayer thin films prepared by the physical vapor deposition method
چکیده انگلیسی
CdSe/ZnSe heterostructure multilayer thin films were prepared with different sublayer thicknesses of CdSe using the physical vapor deposition method. X-ray diffraction studies were used to calculate the average size of the particles and confirmed the (1 1 1) plane of ZnSe. Due to the stacking of alternate CdSe and ZnSe layers, stress was created in the multilayer systems. This results in quantum size effects. Experimentally measured energy values from (hν) vs. (αhν)2 dependence confirm the presence of spin-orbit split in the valence band of CdSe. The calculated band gap energies are greater than that of bulk CdSe. Crystallite sizes (12-4 nm) were calculated based on the predictions of the effective mass approximation model (i.e. Brus model). Results show that the diameters of crystallites are smaller than the Bohr exciton diameter (11.2 nm) of CdSe. Upon particle size decrease, the photoluminescence peak is shifted from the green region to the blue region. Analysis shows that the sublayer thickness of CdSe material changes the properties of CdSe/ZnSe multilayer systems.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 61, Issue 11, June 2013, Pages 4135-4141
نویسندگان
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