کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10620439 | 988631 | 2012 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain relief: Mainspring of Ge semiconducting nanostructures growth on LaAlO3(0Â 0Â 1)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
We report on the initial growth mechanisms of Ge on LaAlO3(0 0 1), a crystalline oxide with a high dielectric constant (high-κ material). Chemical and structural properties were investigated in situ, through X-ray photoelectron spectroscopy and reflection high-energy electron diffraction, and ex situ by using high-resolution transmission electron microscopy. Ge was deposited by molecular beam epitaxy at 600 °C on a c(2 Ã 2) reconstructed LaAlO3(0 0 1) surface. At this temperature, a Volmer-Weber growth mode is observed due to a lower LaAlO3(0 0 1) surface free energy. It is characterized by the immediate formation of crystalline nano-islands. The Ge islands are relaxed and present an abrupt interface with the substrate. Some of them exhibit a preferential relationship in their heteroepitaxy, where the Ge(0 0 1) planes are parallel to the LaAlO3(0 0 1) ones, but rotated by 45° in the [0 0 1] direction. An additional rotation of 6° with respect to the growth axis is also observed, which compensates partially for the strain produced by the high lattice parameter mismatch (â¼5%) between the semiconductor and the oxide.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 60, Issue 5, March 2012, Pages 1929-1936
Journal: Acta Materialia - Volume 60, Issue 5, March 2012, Pages 1929-1936
نویسندگان
Didier Dentel, Hussein Mortada, Mickael Derivaz, Jean-Luc Bischoff, Emmanuel Denys, Francisco M. Morales, Miriam Herrera, J.M. Mánuel, R. GarcÃa,