کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10620572 | 988637 | 2011 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Localized amorphism after high-strain-rate deformation in TWIP steel
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Localized amorphism after high-strain-rate deformation in TWIP steel Localized amorphism after high-strain-rate deformation in TWIP steel](/preview/png/10620572.png)
چکیده انگلیسی
The microstructural features of shear localization, generated by a high-strain-rate deformation (â¼105Â sâ1), of a twinning-induced plasticity (TWIP) steel containing about 17.5Â wt.% Mn were well characterized by means of optical microscopy, transmission electron microscopy and electron backscatter diffraction. The high deformation rate was obtained by a ballistic impact penetration test on the TWIP steel sheet. In addition to the deformation twins observed as the main microstructural characterization in the matrix, some shear bands consisting of complex microstructures were also evidenced in the highly deformed area. Inside the shear band, there exist a large region of amorphous phase and a smooth transition zone that also contains nanocrystalline phases. The grain size decreases gradually in the transition zone, changing from a coarse scale (>100Â nm) to a fine scale (<10Â nm) adjacent to the amorphous region. The coexistence of the amorphous state and the fine-scaled nanocrystalline phase clearly suggests that melting inside the shear bands occurred, which is corroborated by calculations showing a very high rise in temperature due to localized plastic deformation and extremely rapid cooling by heat dissipation into the specimen.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 59, Issue 16, September 2011, Pages 6369-6377
Journal: Acta Materialia - Volume 59, Issue 16, September 2011, Pages 6369-6377
نویسندگان
N. Li, Y.D. Wang, R. Lin Peng, X. Sun, P.K. Liaw, G.L. Wu, L. Wang, H.N. Cai,