Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior

Nanoindentation has been used widely to study pressure-induced phase transformations in Si. Here, a new aspect of the behavior is examined by making nanoindentations on (1 0 0) single crystals using a series of triangular pyramidal indenters with centerline-to-face angles varying from 35.3° to 85.0°. Effects of indenter angle, maximum load, and loading/unloading rate are systematically characterized from nanoindentation load-displacement data in conjunction with micro-Raman imaging spectroscopy of the residual hardness impressions. Results are discussed in terms of prevailing ideas and models for indentation-induced phase transformations in silicon.