کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10642282 | 997641 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystalline boron oxide nanowires on silicon substrate
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Crystalline boron oxide nanowires have been synthesized on silicon substrates by chemical vapor deposition (CVD) process without the use of catalysts or templates. It is pointed out that the boron oxide nanowires are cubic and single crystalline, and the diameter of the nanowires is in the range of 20-80nm. Some of the nanowires branched, and the diameters of the branches and stems of the branched boron oxide nanowires are in the range of 20-80 and 100-200nm, respectively. The crystallinity, morphology, and structure features of the as-prepared boron oxide nanowires were investigated by field emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and selected area electron diffraction. Furthermore, Raman spectrum and Fourier transform infrared spectroscopy of the nanowires were also investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 27, Issue 3, April 2005, Pages 319-324
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 27, Issue 3, April 2005, Pages 319-324
نویسندگان
Qing Yang, Jian Sha, Lei Wang, Yu Zou, Junjie Niu, Can Cui, Deren Yang,